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Typical Electrical Characteristics (continued)
1.1
20
1.08
I D = -250μA
10
5
V GS = 0V
1.06
1
1.04
T J = 125°C
25°C
1.02
1
0.98
0.96
0.94
0.1
0.01
0.001
-55°C
-50
-25
0
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
T J
, JUNCTION TEMPERATURE (°C)
-V SD , BODY DIODE FORWARD VOLTAGE (V)
3000
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Source Current and
Temperature.
10
2000
8
I D = -5.9A
V
DS
= -10V
-15V
-20V
1000
C iss
C oss
6
500
4
300
200
f = 1 MHz
C rss
2
V GS = 0 V
100
0
0.1
0.3
1
3
10
30
0
10
20
30
40
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
Q g , GATE CHARGE (nC)
Figure 10. Gate Charge Characteristics.
-V DD
t on
t off
V IN
R L
t d(on)
t r
90%
t d(off)
90%
t f
D
V OUT
V GS
R GEN
G
DUT
V OUT
10%
10%
90%
S
V IN
50%
50%
10%
PULSE WIDTH
INVERTED
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT454P Rev. D2
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